Intel details progress on fabbing 2D transistors a few atoms thick in standard high volume fab production environment — chipmaker outlines 300-mm fab compatible with integration of 2D transistor contacts and gate stacks

Source: Tom’s Hardware

Summary

Intel and imec demonstrate the first 300‑mm, fab‑compatible integration of contacts and gate stacks for 2D transistors, marking a critical step in turning long‑studied 2D materials from lab experiments into a realistic future option for high‑volume logic manufacturing.