Chinese researchers hail breakthrough in DRAM-like cells, which could be used in embedded or 3D stacked memory — absence of manufacturing detail casts doubt on mass production

Source: Tom’s Hardware

Main Findings

Chinese researchers have demonstrated a 4F² dual‑gate 2T0C capacitor‑less, DRAM‑like memory cell with multi‑bit storage, fast writes, and long retention. In theory, the technology could be used as embedded or stacked 3D memory, but questions remain about its manufacturability and commercial viability.